Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2006-03-07
2006-03-07
Thomas, Tom (Department: 2815)
Static information storage and retrieval
Read/write circuit
C257S530000, C257S532000, C438S131000, C438S467000, C438S600000, C365S225700
Reexamination Certificate
active
07009891
ABSTRACT:
A one-time programming memory element, capable of being manufactured in a 0.13 μm or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write switch, having first and second switches coupled to the capacitor, and a read switch also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write switch to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.
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Battacharya Surya
Chen Henry
Chen Vincent
Ito Akira
Shiau Jay
Broadcom Corporation
Diaz José R.
Sterne Kessler Goldstein & Fox P.L.L.C.
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