System and method for multi-bit flash reads using dual...

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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C711S100000, C711S154000, C365S185290, C365S185330

Reexamination Certificate

active

07103706

ABSTRACT:
A system and methodology is provided for proper reading of multi-bit memory cells in a memory device. A first reference cell and a second reference cell is employed to determine an average dynamic reference value. The average dynamic reference value is determined by reading a programmed bit of the first reference cell and reading an unprogrammed or erased bit of a second reference cell to determine an average dynamic reference value. The average dynamic reference value can be utilized to determine whether data cells are in a programmed state or in an unprogrammed state.

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