System and method for mitigating oxide growth in a gate...

Details System and method for mitigating oxide growth in a gate... System and method for mitigating oxide growth in a gate...

2005-07-26

2005-07-26

Wilson, Christian (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S783000, C438S786000

Reexamination Certificate

active

06921703

ABSTRACT:
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

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