Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-10-09
2007-10-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S437000, C438S048000, C438S072000, C438S636000, C438S322000
Reexamination Certificate
active
11007031
ABSTRACT:
An anti-reflective coating layer for the manufacturing of semiconductor devices is disclosed. In one example, a partial semiconductor device includes a substrate; a bottom anti-reflective coating (BARC) layer over the substrate, and the BARC layer is transformed from being hydrophobic to being hydrophilic during a lithography process; and a photoresist layer over the BARC layer.
REFERENCES:
patent: 5294680 (1994-03-01), Knors et al.
patent: 6165684 (2000-12-01), Mizutani et al.
patent: 2004/0191479 (2004-09-01), Hatakeyama et al.
patent: 2006/0057507 (2006-03-01), Chang et al.
Ho Bang-Ching
Shih Jen-Chieh
Haynes and Boone LLP
Jackson Jerome
Nguyen Joseph
Taiwan Semiconductor Manufacturing Company , Ltd.
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