System and method for manufacturing double EPI N-type...

Details System and method for manufacturing double EPI N-type... System and method for manufacturing double EPI N-type...

2011-06-14

2011-06-14

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S357000, C438S341000

Reexamination Certificate

active

07960222

ABSTRACT:
A system and a method are disclosed for manufacturing double epitaxial layer N-type lateral diffusion metal oxide semiconductor transistors. In one embodiment two N-type buried layers are used to minimize the operation of a parasitic PNP bipolar transistor. The use of two N-type buried layers increases the base width of the parasitic PNP bipolar transistor without significantly decreasing the peak doping profiles in the two N-type buried layers. In one embodiment two N-type buried layers and one P-type buried layer are used to form a protection NPN bipolar transistor that minimizes the operation of parasitic NPN bipolar transistor. The N-type lateral diffusion metal oxide semiconductor transistors of the invention are useful in inductive full load or half bridge converter circuits that drive very high current.

REFERENCES:
patent: 5585294 (1996-12-01), Smayling et al.
patent: 6084254 (2000-07-01), Kim
patent: 6607960 (2003-08-01), Gris et al.
patent: 6693339 (2004-02-01), Khemka et al.
patent: 6902967 (2005-06-01), Beasom
patent: 6958515 (2005-10-01), Hower et al.
patent: 7205630 (2007-04-01), Chang et al.
patent: 7265416 (2007-09-01), Choi et al.
patent: 2006/0141714 (2006-06-01), Lee
patent: 2008/0093641 (2008-04-01), Ludikhuize et al.

Affiliated with

Also associated with

Rating

System and method for manufacturing double EPI N-type... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for manufacturing double EPI N-type..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for manufacturing double EPI N-type... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2712747