Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-05-02
2006-05-02
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
Reexamination Certificate
active
07037816
ABSTRACT:
A method for fabricating a portion of an integrated circuit on a semiconductor substrate. The method includes cleaning the surface of the substrate, and forming a thin insulate over the substrate. The method also includes depositing a high dielectric constant (high-k) material over the thin insulate, and then performing a hydrogen-based anneal on the high-k material. The method further includes performing an oxygen-based anneal on the high-k material, wherein the hydrogen-based and oxygen-based anneals occur sequentially.
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Chen Shih-Chang
Lee Kun-Chih
Lin Yu Min
Mai Karen L.
Wang Ming-Fang
Haynes and Boone LLP
Sarkar Asok Kumar
Taiwan Semiconductor Manufacturing Company , Ltd.
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