Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-03
2007-07-03
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S069000, C257SE21632, C438S199000
Reexamination Certificate
active
10924079
ABSTRACT:
According to one embodiment of the invention, a method for integrating low Schottky barrier metal source/drain includes providing a substrate, forming an epitaxial SiGe layer outwardly from the substrate, forming an epitaxial Si layer outwardly from the SiGe layer, and forming a metal source and a metal drain.
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Brady III W. James
McLarty Peter K.
Sarkar Asok Kumar
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