Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2011-01-11
2011-01-11
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S452000
Reexamination Certificate
active
07867871
ABSTRACT:
An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming a portion of a field oxide in an integrated circuit so that the field oxide has a gradual profile. The gradual profile of the field oxide reduces impact ionization in the field oxide by creating a reduced value of electric field for a given value of applied voltage. The reduction in impact ionization increases the breakdown voltage of the integrated circuit. The gradual profile is formed by using an increased thickness of pad oxide and a reduced thickness of silicon nitride during a field oxide oxidation process.
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Foote Richard W.
Lines Terry Lee
Sadovnikov Alexei
Strachan Andy
National Semiconductor Corporation
Richards N Drew
Withers Grant S
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