System and method for in-situ measuring and monitoring CMP...

Details System and method for in-situ measuring and monitoring CMP... System and method for in-situ measuring and monitoring CMP...

2005-10-04

2005-10-04

Ackun, Jr., Jacob K. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

With indicating

C451S021000, C451S041000

Reexamination Certificate

active

06951503

ABSTRACT:
A system for measuring and scanning a CMP polishing pad thickness is described. The system includes a first sensor arm capable of being moved in a direction substantially parallel with and at a substantially constant distance from a top surface of the CMP polishing pad. The system also includes a first proximity sensor mounted on the first sensor arm. The first proximity sensor being oriented toward the top surface of the CMP polishing pad. The first proximity sensor being capable of measuring a first distance between the first proximity sensor and the top surface of the CMP polishing pad. The system can also include a second sensor arm capable of being moved in a direction parallel with and at a substantially constant distance from a bottom surface of the CMP polishing pad and a second proximity sensor mounted on the second sensor arm, the second proximity sensor being oriented toward the bottom surface of the CMP polishing pad. The second proximity sensor being capable of measuring a second distance between the second proximity sensor and the bottom surface of the CMP polishing pad. A method of measuring CMP polishing pad thickness is also described.

REFERENCES:
patent: 5934974 (1999-08-01), Tzeng
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patent: 6040244 (2000-03-01), Arai et al.
patent: 6186864 (2001-02-01), Fisher et al.
patent: 2002/0137434 (2002-09-01), Choi et al.
patent: 2003/0060127 (2003-03-01), Kaushal et al.
patent: 2004/0038623 (2004-02-01), Chandrasekaran
patent: 2004/0192168 (2004-09-01), Faustmann et al.

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