Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S304000, C257SE21431, C257SE21634, C257SE21619
Reexamination Certificate
active
07118977
ABSTRACT:
According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a gate stack on an outer surface of a semiconductor body. First and second sidewall bodies are formed on opposing sides of the gate stack. A first recess is formed in an outer surface of the gate stack, and a first dopant is implanted into the gate stack after the first recess is formed. The first dopant diffuses inwardly from the outer surface of the gate stack that defines the first recess. The first dopant diffuses toward an interface between the gate stack and the semiconductor body. The first recess increases the concentration of the first dopant at the interface.
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patent: 2004/0248369 (2004-12-01), Wang et al.
Chakravarthi Srinivasan
Chidambaram PR
Brady III W. James
Kebede Brook
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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