System and method for hydrogen-rich selective oxidation

Details System and method for hydrogen-rich selective oxidation System and method for hydrogen-rich selective oxidation

2006-09-19

2006-09-19

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S773000, C438S770000, C438S786000, C257S410000, C257S411000, C257S412000, C257SE21285, C257SE21268, C257SE21193, C257S405000, C118S724000, C118S725000, C118S663000, C118S707000, C118S708000

Reexamination Certificate

active

07109131

ABSTRACT:
The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.

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