System and method for gate formation in a semiconductor device

Details System and method for gate formation in a semiconductor device System and method for gate formation in a semiconductor device

2007-05-22

2007-05-22

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S288000, C438S592000, C438S593000, C438S594000

Reexamination Certificate

active

11147207

ABSTRACT:
A method for forming a memory device is provided. A memory cell stack is formed over a substrate. The memory cell stack includes a first layer formed over the substrate and a second layer formed over the first layer. A dielectric layer is formed over the first and second layers and the substrate. The dielectric layer is etched to expose at least an upper surface of the memory cell stack. The second layer is etched to recess the second layer with respect to an upper surface of the dielectric layer. A silicide region is formed on the second layer in the memory cell stack, where the silicide region in each memory cell stack is bounded by the dielectric layer extending above the upper surface of the memory cell stack.

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2002 IEEE International Solid-State Circuits Conference, 23 pages.

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