Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S264000, C438S288000, C438S592000, C438S593000, C438S594000
Reexamination Certificate
active
11147207
ABSTRACT:
A method for forming a memory device is provided. A memory cell stack is formed over a substrate. The memory cell stack includes a first layer formed over the substrate and a second layer formed over the first layer. A dielectric layer is formed over the first and second layers and the substrate. The dielectric layer is etched to expose at least an upper surface of the memory cell stack. The second layer is etched to recess the second layer with respect to an upper surface of the dielectric layer. A silicide region is formed on the second layer in the memory cell stack, where the silicide region in each memory cell stack is bounded by the dielectric layer extending above the upper surface of the memory cell stack.
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Park Jae-yong
Sugino Rinji
Tokuno Hirokazu
Wada Hajime
Harrity & Snyder L.L.P.
Smith Zandra V.
Spansion LLC
Thomas Toniae M.
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