System and method for gate formation in a semiconductor device

Details System and method for gate formation in a semiconductor device System and method for gate formation in a semiconductor device

2008-01-22

2008-01-22

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C438S655000, C257SE21622

Reexamination Certificate

active

07320914

ABSTRACT:
A method for forming a memory device is provided. A first layer is formed over a substrate. A second layer is formed over the first layer. A mask is formed over the second layer. Spacers are formed adjacent opposite sides of the mask. The second layer is etched to form at least one memory cell stack. The memory device is cleaned to remove the mask. A silicide region is formed within the second layer in the at least one memory cell stack, where the silicide region in each memory cell stack is bounded by the spacers.

REFERENCES:
patent: 5686331 (1997-11-01), Song
patent: 5981365 (1999-11-01), Cheek et al.
patent: 2004/0014290 (2004-01-01), Yang et al.

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