System and method for forming a gate dielectric

Details System and method for forming a gate dielectric System and method for forming a gate dielectric

2007-12-04

2007-12-04

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21274, C257SE21279, C257SE21281, C257SE21290

Reexamination Certificate

active

10913941

ABSTRACT:
A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

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