Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-27
2008-05-27
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21424, C257SE27064
Reexamination Certificate
active
11207074
ABSTRACT:
A system and method for ensuring the migratability of circuits into future technologies while minimizing fabrication costs and maintaining or improving power efficiency are provided. A mask layer is introduced to portions of the integrated circuit prior to a stress inducing layer being applied to the integrated circuit. In an exemplary embodiment of the present invention, a tensile or compressive film is applied to the devices on the integrated circuit chip but is removed from those devices whose operation is to be modified. Thereafter, a tensile or compressive strain layer is applied to the devices whose film was removed. An additional mask layer may then be used to effect a halo or well implant to relax the strain on the devices not being protected by the mask layer. In this way, the current of the non-protected devices is reduced back to its original target design point.
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patent: 2005/0218455 (2005-10-01), Maeda et al.
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Runyon Stephen L.
Stiffler Scott
Dang Trung
Salys Casimer K.
Walder, Jr. Steven J.
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