System and method for detecting local mechanical stress in...

Optics: measuring and testing – Material strain analysis

Reexamination Certificate

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C324S754050, C324S755070, C324S750220, C073S760000

Reexamination Certificate

active

07944550

ABSTRACT:
A method of detecting local mechanical stress in integrated devices is provided, the method comprising: enabling the detection of a photovoltage difference between a scan probe device and a surface portion of an integrated device, the scan probe device being configured to deflect in response to the photovoltage difference; measuring the deflection of the scan probe device in response to the photovoltage difference between the scan probe device and the surface portion of the integrated device; and calculating a local stress level within the integrated device by determining a local work function of the surface portion of the integrated device based upon the deflection of the scan probe device.

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patent: 2006/0267622 (2006-11-01), Lagowski et al.
patent: 2009/0139312 (2009-06-01), Hawthorne et al.
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Weaver, J. M. R.; Wickramasinghe, H. K., Semiconductor characterization by scanning force microscope surface photovoltage microscopy. Journal of Vacuum Science & Technology, B: Microelectronics and Nonometer Structures 1991, 9, (3), 1562-5. [SPV-KPFM].
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