Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-02-27
2007-02-27
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
10823981
ABSTRACT:
A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.
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Almes Robin Lynn
Church Mark Anthony
Gutberlet Mary Kathyrn
Tsay Jiunn
Wang Benjamin Lu Chen
Bracewell & Giuliani LLP
Dinh Paul
Hitachi Global Storage Technologies
Parihar Suchin
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