Method of fabricating a semiconductor having dual gate...

Details Method of fabricating a semiconductor having dual gate... Method of fabricating a semiconductor having dual gate...

2007-02-27

2007-02-27

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S199000

Reexamination Certificate

active

10703388

ABSTRACT:
Fabricating a semiconductor includes depositing a metal layer outwardly from a dielectric layer and forming a mask layer outwardly from a first portion of the metal layer. Atoms are incorporated into an exposed second portion of the metal layer to form a composition-altered portion of the metal layer. The mask layer is removed from the first portion of the metal layer and a barrier layer is deposited outwardly from the metal layer. A poly-Si layer is deposited outwardly from the barrier layer to form a semiconductor layer, where the barrier layer substantially prevents reaction of the metal layer with the poly-Si layer. The semiconductor layer is etched to form gate stacks, where each gate stack operates according to one of a plurality of work functions.

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