System and method for anisotropic etching of silicon nitride

Details System and method for anisotropic etching of silicon nitride System and method for anisotropic etching of silicon nitride

1996-12-18

1999-07-27

Hutzell, Paula K.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, 438345, C01B 3300, C07F 702

Patent

active

059289643

ABSTRACT:
A system and method is provided for anisotropically etching a silicon nitride layer (12) in an ion-assisted plasma reactor. A chuck (34) supports a photoresist layer (10), the silicon nitride layer (12), and a semiconductor water (14). A chuck temperature controller (36) is provided for adjusting the temperature of the chuck (34) to either increase or decrease the etch bias of the silicon nitride layer (12) to achieve an optimal etch bias.

REFERENCES:
patent: 4264409 (1981-04-01), Forget et al.
patent: 4820377 (1989-04-01), Davis et al.
patent: 4820378 (1989-04-01), Loewenstein

Affiliated with

Also associated with

Rating

System and method for anisotropic etching of silicon nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for anisotropic etching of silicon nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for anisotropic etching of silicon nitride will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-878244