Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-10-25
2009-12-22
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S200000, C365S233100, C365S193000
Reexamination Certificate
active
07636262
ABSTRACT:
A memory system having a memory element chip (DRAM) and a memory controller chips having a plurality of drivers and receivers and latches for transferred data. For writes clocks, write data and write for CRC (cyclic redundancy checks) is transferred to the DRAM from the memory controller and latched for error checking. The reads are clocked and the read data is received and transferred to a read data latch with also receives a clocked read strobe for verification of data integrity from DRAM. Each chip has a bi-functional pin that acts as a shared CRC pin during write and acts as a shared strobe pin during READ. Data transfers with the CRC signal and DQS signal are transferred across two paths CRC0/DQS and CRC1/DQS1. One could also transfer the CRC signal across one path with only the CRC0/DQS signal. Read operations have no CRC, and have no need for CRC because transfer errors during read can be detected by memory error correction coding (ECC). Write data provides source synchronous I/O data to said memory element chip needed for modem high speed memory communications.
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“Processor fits into pin-limited design,” Integrated System Design, vol. 14, No. 153, p. 10-18.
Coteus Paul W.
Kim Kyu-Hyoun
Augspurger Lynn L.
Dinh Son
International Business Machines - Corporation
Nguyen Nam
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