Symmetrical etching ring with gas control

Details Symmetrical etching ring with gas control Symmetrical etching ring with gas control

1993-11-03

1996-03-12

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118723E, H01L 2100

Patent

active

054983134

ABSTRACT:
In a plasma or RIE etching tool using a uniquely designed annulus around a wafer supporting pedestal, it has been found that the introduction of one or more gases in the region immediately adjacent the annulus controls the amount of etching of features in that region in the surface of the wafer mounted on the pedestal. By so controlling the amount of gas in this region, the slope of the walls of the etched features can be also controlled.

REFERENCES:
patent: 4380489 (1983-04-01), Beinvogl et al.
patent: 4512841 (1985-04-01), Cunningham, Jr. et al.
patent: 4632719 (1986-12-01), Chow et al.
patent: 4793975 (1988-12-01), Drage
H. Leung, "Introducing the Precision Etch 8310 Molecular Backside Cooling (MBC) Capability," Applied Material, Inc., Spring 1990.

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