Symmetric non-intrusive and covert technique to render a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S344000, C257S408000, C257S900000

Reexamination Certificate

active

10881286

ABSTRACT:
A technique for and structures for camouflaging an integrated circuit structure. The technique including forming active areas of a first conductivity type and LDD regions of a second conductivity type resulting in a transistor that is always non-operational when standard voltages are applied to the device.

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