Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-03
2011-05-03
Gurley, Lynne A (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S198000, C438S514000, C438S598000, C438S508000
Reexamination Certificate
active
07935603
ABSTRACT:
A technique for and structures for camouflaging an integrated circuit structure. The technique including forming active areas of a first conductivity type and LDD regions of a second conductivity type resulting in a transistor that is always non-operational when standard voltages are applied to the device.
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paten
Chow Lap-Wai
Clark Jr. William M.
Harbison Gavin J.
Ou Yang Paul
Gebremariam Samuel A
Gurley Lynne A
HRL Laboratories LLC
Ladas & Parry
Promtek
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