Suspended gate single-electron device

Details Suspended gate single-electron device Suspended gate single-electron device

2006-03-28

2006-03-28

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S585000, C438S593000

Reexamination Certificate

active

07018881

ABSTRACT:
The present invention provides a single-electron transistor device (100). The device (100) comprises a source (105) and drain (110) located over a substrate (115) and a quantum island (120) situated between the source and drain (105, 110), to form tunnel junctions (125, 130) between the source and drain (105, 110). The device (100) further includes a movable electrode (135) located adjacent the quantum island (120) and a displaceable dielectric (140) located between the moveable electrode (135) and the quantum island (120). The present invention also includes a method of fabricating a single-electron device (200), and a transistor circuit (300) that include a single-electron device (310).

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