Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-03-15
1997-12-09
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
219634, C23C 1600
Patent
active
056955677
ABSTRACT:
A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, includes plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls. The wall pieces are made of a material which may be heated by induction and are secured to each other to form the susceptor. A channel is defined by susceptor walls adapted to receive the substrate and through which a source material for the growth is to be fed. At least one SiC-plate is inserted to cover at least one of the top and bottom walls and to extend between and separate the lateral walls and the at least one of the top and bottom walls.
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Kordina, Growth And Characterisation of Silicon Carbide Power Device Material, Paper I, pp. 47-59, Linkoping Studies in Science and Technology, Dissertations No. 352, Department of Physics and Measurement Technology, Linkoping University, Sweden, 1994.
Berge Rune
Fornell Jan-Olov
Kordina Olle
Nilsson Roger
ABB Research Ltd.
Bueker Richard
Lund Jeffrie R.
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