Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-18
2005-10-18
Smith, Brad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S687000
Reexamination Certificate
active
06955984
ABSTRACT:
Methods and apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.
REFERENCES:
patent: 4397812 (1983-08-01), Mallory, Jr.
patent: 5261950 (1993-11-01), Morikawa et al.
patent: 5380546 (1995-01-01), Krishnan et al.
patent: 5680092 (1997-10-01), Yamada et al.
patent: 6020021 (2000-02-01), Mallory, Jr.
patent: 6130157 (2000-10-01), Liu et al.
patent: 6225210 (2001-05-01), Ngo et al.
patent: 6339025 (2002-01-01), Liu et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6368948 (2002-04-01), Ngo et al.
patent: 6383925 (2002-05-01), Ngo et al.
patent: 6406996 (2002-06-01), Bernard et al.
patent: 6410426 (2002-06-01), Xing et al.
patent: 6432822 (2002-08-01), Ngo et al.
patent: 6500749 (2002-12-01), Liu et al.
patent: 6509267 (2003-01-01), Woo et al.
patent: 6605874 (2003-08-01), Leu et al.
Saito, T., et al., “A Novel Copper Interconnection Technology Using Self Aligned Metal Capping Method,” IEEE (Jun. 2001) pp. 15-17.
Lei Ming-Dai
Lin Cheng-Chung
Lin Chia-Hui
Lin Yih-Hsiung
Liu Ai-Sen
Slater & Matsil L.L.P.
Smith Brad
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Surface treatment of metal interconnect lines does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface treatment of metal interconnect lines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface treatment of metal interconnect lines will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3470273