Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-16
2007-10-16
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S396000
Reexamination Certificate
active
10848985
ABSTRACT:
A method for forming a ruthenium metal layer on a dielectric layer comprises forming a silicon dioxide layer, then treating the silicon dioxide with a silicon-containing gas, for example silicon hydrides such as silane, disilane, or methylated silanes. Subsequently, a ruthenium metal layer is formed on the treated dielectric layer. Treating the dielectric layer with a silicon-containing gas enhances adhesion between the dielectric and the ruthenium without requiring the addition of a separate adhesion layer between the dielectric layer and the ruthenium metal layer.
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Kraus Brenda D.
Marsh Eugene P.
Micro)n Technology, Inc.
Tsai H. Jey
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