Surface treatment of an oxide layer to enhance adhesion of a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S240000, C438S396000

Reexamination Certificate

active

10848985

ABSTRACT:
A method for forming a ruthenium metal layer on a dielectric layer comprises forming a silicon dioxide layer, then treating the silicon dioxide with a silicon-containing gas, for example silicon hydrides such as silane, disilane, or methylated silanes. Subsequently, a ruthenium metal layer is formed on the treated dielectric layer. Treating the dielectric layer with a silicon-containing gas enhances adhesion between the dielectric and the ruthenium without requiring the addition of a separate adhesion layer between the dielectric layer and the ruthenium metal layer.

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