Surface treatment method and equipment

Details Surface treatment method and equipment Surface treatment method and equipment

2006-03-21

2006-03-21

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S069000, C438S706000, C134S001100, C134S002000

Reexamination Certificate

active

07014788

ABSTRACT:
A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and/or halide to a gas which is used for generating, atomic hydrogen in the plasma. The present method also includes utilizing a characteristics of plasma downstream (11) in which the objective surface is prevented from physical damage caused by high energy particle and undesirable reactive species are controlled so as to avoid their influence. In an alternative embodiment, the present invention includes a method for a material surface treatment utilizing atomic hydrogen without the influence of atomic oxygen by using a gas, as a plasma source, containing the molecule and/or compound of chlorine, bromine and/or iodine and not containing molecules with oxygen atom.

REFERENCES:
patent: 5007983 (1991-04-01), Lerner et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5403434 (1995-04-01), Moslehi
patent: 5403436 (1995-04-01), Fujimura et al.
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5620559 (1997-04-01), Kikuchi
patent: 5744049 (1998-04-01), Hills et al.
patent: 5763326 (1998-06-01), Barth
patent: 5885361 (1999-03-01), Kikuchi et al.
patent: 6149829 (2000-11-01), Takamatsu et al.
patent: 6551939 (2003-04-01), Takamatsu et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 7-75229 (1993-04-01), None
patent: 19950005229 (1996-07-01), None
Grill, Alfred, “ Cold Plasma in materials Fabrication”, 1993, pp. 230-231.
Fujimura et al., “Study on Ashing Process for Removal of ion Implanted Resist Layer”, Process Symposium, Dry Process, Procedure vol. 88-7, Honolulu, Hawaii, May 1987 (The Electro Chemical Society Inc. Pennington, 1988), pp. 126-133.
Fujimura et al., “Resist Stripping in an O+H20 Plasma Downstream”, J. Vac. Sci. Technol. B9 (2), Mar./Apr. 1991, pp. 357-361.
Kikuchi et al., “Effects of H20 on Atomic Hydrogen Generation in Hydrogen Plasma”, Jpn. J. Appl. Phys., vol. 32 (1993), Part 1, No. 6B, Jun. 1993, pp. 3120-3124.
Kikuchi et al., “Cleaning of Silicon Surfaces by NF3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment”, Jpn. J. Appl. Phys., vol. 35 (1996), Part 1, No. 2B, Feb. 1996, pp. 1022-1026.
Kim et al., “Recombination of O, N, and H Atoms on Silica: Kinetics and Mechanism”, Langmuir 1991, vol. 7, No. 12, pp. 2999-3005.
Martin, “Diamond Film Growth in a Flowtube: A Temperature Dependence Study”, J. Appl. Phys., vol. 70., No. 10, Nov. 15, 1991, pp. 5667-5674.
Papers by S. Fujimura, H. Yano, J. Konno, T. Takada, and K. Inayoshi: Study on aching process for removal ion implanted resist layer, Process Symposium, Dry Process, Procedure vol. 88-7, Honolulu, Hawaii May 1987 (The electro chemical Society Inc. Pennington, 1988) pp. 126-133.
J. Kikuchi, M. Iga, H. Ogawa, S. Fujimura, and H. Yano: Native oxide removal on Si surface by NF3-added hydrogen and water vapor plasma downstream treatment, Jpn. J. Appl. Phys, 35, 1022-1026 (1996).
J. VAC Sci Tehnol B, 9, 357-361 (1991).
L. Brown, J.Phys. Chem., 71, 2429 (1967).
Lee et al., “Chrome and Zinc Contaminants Removal from Silicon (100) Surfaces,”Jpn. J. Appl. Phys.,40:4002-4006 (2001). Jun.
Young C. Kim and Michael Boudant, recombination of O, N, and H atoms as Silica:Kinetics and mechanism , hagemuir, 7, 2999-3005 (1991), and L. Robbin Martin, “Diamond film growth in a flowtube : A temperature dependence study; J. Appl. Phys., 70, 5667-5674 (1991)”.

Affiliated with

Also associated with

Rating

Surface treatment method and equipment does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Surface treatment method and equipment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface treatment method and equipment will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3563664