Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-09-13
2000-09-05
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, H01L 2978, H01L 3300
Patent
active
061147338
ABSTRACT:
Method of fabricating a narrow linewidth transistor having a low sheet resistance. The transistor may be fabricated in a surface of a semiconductor layer (12). A gate body (14) may be formed separated from an outer surface (16) of the semiconductor layer (12) by a gate insulator (18). The gate body (14) may have an inner surface (20) proximate to the semiconductor layer (12) and an opposite outer surface (22). An insulator layer (30) may be deposited outwardly of the semiconductor layer (12) and the gate body (14). The insulator layer (30) may be anisotropically etched to form side walls (32) adjacent to the gate body (14). The anisotropic etch may cause a residual layer of contaminants (34) to form on the outer surface (16) of the semiconductor layer (12) and on the outer surface (22) of the gate body (14). A protective layer (50) may be deposited outwardly of the residual layer of contaminants (34). Dopants may be implanted into the semiconductor layer (12) proximate to the side walls (32). The semiconductor layer (12) may then be thermally treated to activate the dopants. The protective layer (50) may thereafter be removed and a metal layer (60) deposited outwardly of the semiconductor layer (12) and the gate body (14). A silicide layer (70) may be formed by interacting the metal layer (60) with the outer surface (16) of the semiconductor layer (12) and with the outer surface (22) of the gate body (14).
REFERENCES:
patent: 5395781 (1995-03-01), Wilhoit
patent: 5506158 (1996-04-01), Eklund
patent: 5710076 (1998-01-01), Dai et al.
Sze, Semiconductor Devices , p. 377, 1985.
Brady III Wade James
Garner Jacqueline J.
Meier Stephen D.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Surface protective layer for improved silicide formation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface protective layer for improved silicide formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface protective layer for improved silicide formation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2214924