Surface processing method and an apparatus for carrying out the

Details Surface processing method and an apparatus for carrying out the Surface processing method and an apparatus for carrying out the

1994-05-31

1995-10-31

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 1566431, 427551, 427457, 20419234, 20429836, H01L 2100

Patent

active

054626358

ABSTRACT:
A surface processing method capable of processing the surface of a work at a high processing rate without damaging the surface of the work uses, in combination, a fast processing technique using charged particles and a moderate processing technique using neutral particles that scarcely damage the surface of the work, and a surface processing apparatus suitable for carrying out the surface processing method. In carrying out a surface treatment process, the substrate is processed in a moderate surface processing mode using neutral particles while the substrate is exposed substantially to charged particles, and the substrate is processed in a fast surface processing mode using charged particles while the substrate is not exposed substantially to charged particles to achieve the surface treatment process at a high processing rate without damaging the surface of the substrate.

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"Neutral-Beam-Assisted Etching of SiO.sub.2 /-a Charge-Free Etching Process"; Jpn. J. Appl. Phys. 1; Mizatani et al.; Oct. 1990; vol. 29; No. 10; pp. 2220-2222.
Roy et al, "Synthesis of High-Quality Ultra-Thin Gate Oxides for ULSI Applications", AT&T Technical Journal, vol. 67, No. 6, Nov. 1988, pp. 155-174.
L. M. Ephrath, "Two-Step Dry Process for Delineating Micron and Submicron Dimension Polysilicon Gates", IBM Technical Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, p. 4236.
Japan. J. Appl. Phys., vol. 12, (1973), No. 1, "Etching Characteristics of Silicon and its Compounds by Gas Plasma", Abe et al, pp. 154-155.

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