Surface preparation prior to deposition on germanium

Details Surface preparation prior to deposition on germanium Surface preparation prior to deposition on germanium

2007-04-10

2007-04-10

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S763000, C438S785000, C257SE21171

Reexamination Certificate

active

10910551

ABSTRACT:
Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface is treated with plasma products or thermally reacted with vapor reactants. Examples of surface treatments leave oxygen bridges, nitrogen bridges, —OH, —NH and/or —NH2terminations that more readily adsorb ALD reactants. The surface treatments avoid deep penetration of the reactants into the germanium bulk but improve nucleation.

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