Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2009-07-01
2011-11-15
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S393000, C029S025350
Reexamination Certificate
active
08058182
ABSTRACT:
Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.
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Boyce James B.
Boyce, legal representative Kathleen
Chen Jingkuang
Kubby Joel A.
Pan Feixia
Fay Sharpe LLP
Toledo Fernando L
Xerox Corporation
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