Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-31
2005-05-31
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S300000, C438S592000, C438S586000, C438S776000, C438S792000
Reexamination Certificate
active
06900092
ABSTRACT:
The present invention provides a method of formed a nitrided surface layer atop a polysilicon gate electrode that inhibits the growth of an epi silicon layer thereon. Specifically, the method of the present invention includes the steps of: forming a polysilicon layer atop a gate dielectric layer, forming a nitrided surface layer on the polysilicon layer; selectively removing portions of the nitrided surface layer and the polysilicon layer stopping on the gate dielectric layer, while leaving a patterned stack of the nitrided surface layer and the polysilicon layer on the gate dielectric layer; forming sidewall spacers on at least exposed vertical sidewalls of polysilicon layer; removing portions of the gate dielectric layer not protected by the sidewall spacers; and growing an epi silicon layer on exposed horizontal surfaces of an underlying semiconductor substrate.
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Ajmera Atul C.
Schepis Dominic J.
Steigerwalt Michael D.
Niebling John F.
Pepper Margaret A.
Pompey Ron
Scully Scott Murphy & Presser
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