Surface cleaning using sacrificial getter layer

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Gettering of semiconductor substrate

Reexamination Certificate

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Details

C438S402000, C438S476000, C438S655000, C438S664000, C438S683000, C257SE21318, C257SE21593

Reexamination Certificate

active

07993987

ABSTRACT:
A method includes providing a substrate including a non-insulative, silicon-including region for silicidation, the substrate including one or more contaminants at a top surface thereof. A getter layer is deposited over the non-insulative, silicon-including region, the getter layer reacting with at least one of the one or more contaminants in the non-insulative, silicon-including region at approximately room temperature. The getter layer is removed, and siliciding of the non-insulative, silicon-including region is performed.

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