Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Gebremariam, Samuel A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S336000, C257S339000
Reexamination Certificate
active
08004038
ABSTRACT:
A semiconductor device includes a first high-voltage well having a first dopant disposed in a semiconductor substrate; a second high-voltage well having a second dopant disposed in the semiconductor substrate, laterally adjacent to the first high-voltage well; a low-voltage well having the second dopant disposed overlying the second high-voltage well; a drain region having the first dopant disposed in the first high-voltage well; a source having the first dopant disposed in the low-voltage well; and a gate disposed on the semiconductor substrate and laterally between the source and the drain, wherein the gate includes a thin gate dielectric and a gate electrode.
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Chinese Patent Office, Chinese Office Action, Aug. 1, 2008, 6 Pages, Application No. 2007100859000.
Chien Hsing-Yi
Hsia Te-Yin
Jong Yu-Chang
Liu Ruey-Shin
Gebremariam Samuel A
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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