Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-24
2009-10-13
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S135000, C257S339000, C257S341000, C257S342000, C257SE29257, C438S283000, C438S303000, C438S305000, C438S268000
Reexamination Certificate
active
07602014
ABSTRACT:
An embodiment of an MOS device includes a semiconductor substrate of a first conductivity type, a first region of the first conductivity type having a length Laccand a net active dopant concentration of about Nfirst, a pair of spaced-apart body regions of a second opposite conductivity type and each having a length Lbodyand a net active dopant concentration of about Nsecond, channel regions located in the spaced-apart body regions, source regions of the first conductivity type located in the spaced-apart body regions and separated from the first region by the channel regions, an insulated gate overlying the channel regions and the first region, and a drain region of the first conductivity type located beneath the first region. In an embodiment, (Lbody*Nsecond)=k1*(Lacc*Nfirst), where k1has a value in the range of about 0.6≦k1≦1.4.
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Baird Robert W.
deFresart Edouard D.
Qin Ganming
Belousov Alexander
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Smith Bradley K
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