Shift register and MOS-type solid-state image sensor

Details Shift register and MOS-type solid-state image sensor Shift register and MOS-type solid-state image sensor

2005-01-14

2009-06-09

Tran, Sinh N (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S294000

Reexamination Certificate

active

07545424

ABSTRACT:
An object of the present invention is to provide a shift register in which it is prevented from malfunctioning because of a portion between a first transistor and a second transistor being in a high-impedance state. The shift register of the present invention includes capacitor means5for storing data outputted from a unit circuit1of the preceding block. A first transistor3is turned ON only when data is being stored in the capacitor means5. A second transistor7includes a control electrode and an input-side diffusion layer connected to the output-side diffusion layer of the first transistor3, and is turned ON only when a pulse of a clock signal from the first transistor3is inputted to the control electrode and the input-side diffusion layer. Potential controlling means2keeps the second transistor7OFF at least during a period in which the second transistor7is supposed to be OFF.

REFERENCES:
patent: 6295046 (2001-09-01), Hebiguchi
patent: 2004/0234020 (2004-11-01), Yu
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patent: 06-202588 (1994-07-01), None
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patent: 2001-052494 (2001-02-01), None
patent: 2001-060398 (2001-03-01), None
patent: 2001-273785 (2001-10-01), None
patent: 2002-055660 (2002-02-01), None
patent: 2003-309768 (2003-10-01), None

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