Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-29
2005-11-29
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S234000, C257S328000
Reexamination Certificate
active
06969657
ABSTRACT:
A process for forming a superjunction device that includes a series of implants to form closely spaced implant regions which are linked together by a short thermal step, whereby deep and narrow regions can be formed within a semiconductor body.
REFERENCES:
patent: 6586798 (2003-07-01), Frisina
patent: 6639276 (2003-10-01), Spring et al.
Cao Jianjun
Henson Timothy
Spring Kyle
International Rectifier Corporation
Le Dung A.
Ostrolenk Faber Gerb & Soffen, LLP
LandOfFree
Superjunction device and method of manufacture therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superjunction device and method of manufacture therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superjunction device and method of manufacture therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3473129