Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-22
2011-03-22
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S268000, C438S299000
Reexamination Certificate
active
07910439
ABSTRACT:
A manufacturing process and design structure for a super self-aligned trench power MOSFET. A plurality of super self-aligned trenches of different depths are formed into the body layer and epitaxial layers, preferably by using a multilayer stack of dielectric material etched to form spacers. Respective trenches contain gate conductors, body-contact conductors, and preferably a third trench containing a recessed field plate. This results in a MOSFET structure having high cell density and low gate charges and gate-drain charges.
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Darwish Mohamed N.
Zeng Jun
Geyer Scott B
Groover & Associates
Maxpower Semiconductor Inc.
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