Super self-aligned collector device for mono-and hetero...

Details Super self-aligned collector device for mono-and hetero... Super self-aligned collector device for mono-and hetero...

2006-03-21

2006-03-21

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S313000, C438S340000

Reexamination Certificate

active

07015085

ABSTRACT:
The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the substrate.

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W. Liu, et al., “Novel Doubly Self-Aligned AIGaAs/GaAs HBT,” Abstract, Electronic Letters, IEE Stevenage, GB, vol. 26, No. 17 Aug. 16, 1990 2 pages.
PCT Search Report dated Sep. 12, 2003, 7 pages.

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