Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-06
2008-05-06
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23021
Reexamination Certificate
active
07368374
ABSTRACT:
A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.
REFERENCES:
patent: 3189978 (1965-06-01), Stetson
patent: 3216028 (1965-11-01), Reginald
patent: 3835530 (1974-09-01), Kilby
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 4918811 (1990-04-01), Eichelberger et al.
patent: 4937203 (1990-06-01), Eichelberger et al.
patent: 5108825 (1992-04-01), Wojnarowski et al.
patent: 5250843 (1993-10-01), Eichelberger
patent: 5324687 (1994-06-01), Wojnarowski
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5366906 (1994-11-01), Wojnarowski et al.
patent: 5455459 (1995-10-01), Fillion et al.
patent: 5527741 (1996-06-01), Cole et al.
patent: 5532614 (1996-07-01), Chiu
patent: 5731222 (1998-03-01), Malloy et al.
patent: 5818102 (1998-10-01), Rostoker
patent: 5841193 (1998-11-01), Eichelberger
patent: 5851911 (1998-12-01), Farnworth
patent: 5858815 (1999-01-01), Heo et al.
patent: 5866952 (1999-02-01), Wojnarowski et al.
patent: 5903058 (1999-05-01), Akram
patent: 5910687 (1999-06-01), Chen et al.
patent: 6046101 (2000-04-01), Dass et al.
patent: 6121688 (2000-09-01), Akagawa
patent: 6133065 (2000-10-01), Akram
patent: 6144102 (2000-11-01), Amagai
patent: 6214630 (2001-04-01), Hsuan et al.
patent: 6228548 (2001-05-01), King et al.
patent: 6228684 (2001-05-01), Maruyama
patent: 6277670 (2001-08-01), You
patent: 6291894 (2001-09-01), Farnworth et al.
patent: 6344401 (2002-02-01), Lam
patent: 6358833 (2002-03-01), Akram
patent: 6396148 (2002-05-01), Eichelberger et al.
patent: 6397685 (2002-06-01), Cook et al.
patent: 6403448 (2002-06-01), Reddy
patent: 6428641 (2002-08-01), Yoon et al.
patent: 6469356 (2002-10-01), Kumagai et al.
patent: 6472745 (2002-10-01), Iizuka
patent: 6479887 (2002-11-01), Yoon et al.
patent: 6586275 (2003-07-01), Kim et al.
patent: 6611052 (2003-08-01), Poo et al.
patent: 6627991 (2003-09-01), Joshi
patent: 6656827 (2003-12-01), Taso et al.
patent: 6686615 (2004-02-01), Cheng et al.
patent: 6720212 (2004-04-01), Robl et al.
patent: 6759311 (2004-07-01), Eldridge et al.
patent: 6867502 (2005-03-01), Katagiri et al.
patent: 6894399 (2005-05-01), Vu et al.
patent: 6909184 (2005-06-01), Ushijima et al.
patent: 7071487 (2006-07-01), Maruyama
patent: 2001/0033031 (2001-10-01), Shibata
patent: 2001/0046168 (2001-11-01), Barth et al.
patent: 2002/0038890 (2002-04-01), Ohuchi
patent: 2002/0177294 (2002-11-01), Otaki
patent: 2002/0190336 (2002-12-01), Shimizu et al.
patent: 2004/0166662 (2004-08-01), Lei
patent: 2004/0183213 (2004-09-01), Hsu et al.
patent: 2005/0218473 (2005-10-01), Wakisaka
patent: 2005/0245061 (2005-11-01), Satoh et al.
patent: 404107846 (1992-04-01), None
patent: 408162456 (1996-06-01), None
patent: 363312648 (1998-12-01), None
Boon Suan Jeung
Chia Yong Poo
Low Siu Waf
Neo Yong Loo
Ser Bok Leng
Fourson George R.
Micro)n Technology, Inc.
Parker John M.
Whyte Hirschboeck Dudek SC
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