Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-10-27
2011-11-08
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C556S465000, C585S002000, C585S800000, C585S833000
Reexamination Certificate
active
08053375
ABSTRACT:
An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.
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Battle Scott
Baum Thomas H.
Bilodeau Steven M.
Chen Tianniu
Hunks William
Advanced Technology & Materials Inc.
Chappuis Maggie
Hultquist Steven J.
Hultquist IP
Pert Evan
LandOfFree
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