Substrate with controlled amount of noble gas ions to reduce cha

Details Substrate with controlled amount of noble gas ions to reduce cha Substrate with controlled amount of noble gas ions to reduce cha

1996-07-09

1998-02-10

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257384, 257385, H01L 2976, H01L 2994

Patent

active

057172382

ABSTRACT:
A process and resulting product are described for controlling the channeling and/or diffusion of a boron dopant in a P- region forming the lightly doped drain (LDD) region of a PMOS device in a single crystal semiconductor substrate, such as a silicon substrate. The channeling and/or diffusion of the boron dopant is controlled by implanting the region, prior to implantation with a boron dopant, with noble gas ions, such as argon ions, at a dosage at least equal to the subsequent dosage of the implanted boron dopant, but not exceeding an amount equivalent to the implantation of about 3.times.10.sup.14 argon ions/cm.sup.2 into a silicon substrate, whereby channeling and diffusion of the subsequently implanted boron dopant is inhibited without, however, amorphizing the semiconductor substrate.

REFERENCES:
patent: 5334870 (1994-08-01), Katada et al.
patent: 5397909 (1995-03-01), Moslehi

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