Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2006-03-14

2011-11-29

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S058000, C216S067000, C438S714000, C156S345330

Reexamination Certificate

active

08066894

ABSTRACT:
A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

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English-language translation of Japanese Office Action issued in Japanese Patent Application 2007-508141 drafted on May 25, 2010.

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