Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

Filed on

2009-03-25

Date issued

2010-12-14

Examiner

Stark, Jarrett J (Department: 2823)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating of substrate containing semiconductor region or of...

SubSubClass

Multiple layers

Other Related Categories

C257SE21103, C257SE21104, C118S725000

Type

Reexamination Certificate

Status

active

Patent number

07851379

Description

ABSTRACT:
There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.

REFERENCES:
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5837580 (1998-11-01), Thakur et al.
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6121081 (2000-09-01), Thakur et al.
patent: 6281057 (2001-08-01), Aya et al.

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