Substrate processing method and material for electronic device

Details Substrate processing method and material for electronic device Substrate processing method and material for electronic device

2007-07-31

2007-07-31

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S776000, C438S769000, C438S765000, C257S309000, C257S314000, C257S064000, C257SE21193

Reexamination Certificate

active

10485410

ABSTRACT:
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.

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