Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-10-31
2006-10-31
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
C438S906000, C438S508000, C257SE21471, C257SE21313, C257SE21079
Reexamination Certificate
active
07129185
ABSTRACT:
A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.
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Aoyama Shintaro
Igeta Masanobu
Shinriki Hiroshi
Smith Matthew
Stark Jarrett
Tokyo Electron Limited
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