Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-06-19
2007-06-19
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S769000, C438S772000, C438S775000, C438S765000, C438S771000, C438S787000, C257SE21193, C257SE21209, C257SE21215, C257SE21218
Reexamination Certificate
active
10988561
ABSTRACT:
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.
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Matsuyama Seiji
Nakanishi Toshio
Ozaki Shigenori
Sasaki Masaru
Sugawara Takuya
Lindsay, Jr. Walter
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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