Substrate processing apparatus and substrate processing method

Coating processes – Measuring – testing – or indicating

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427 10, 4272481, 438 5, 438 7, C23C 1600

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active

058977104

ABSTRACT:
A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.

REFERENCES:
patent: 4181544 (1980-01-01), Cho
patent: 4388034 (1983-06-01), Takahashi
patent: 4433951 (1984-02-01), Koch
patent: 4498416 (1985-02-01), Bouchaib
patent: 4592306 (1986-06-01), Galleso
patent: 4642243 (1987-02-01), Yamazaki
patent: 4670126 (1987-06-01), Messer
patent: 4824545 (1989-04-01), Arnold et al.
patent: 5024570 (1991-06-01), Kiriseko
patent: 5240552 (1993-08-01), Yu
patent: 5271796 (1993-12-01), Miyashita
patent: 5310410 (1994-05-01), Begin
Bader et al., "Integrated Processing Equipment", Solid State Technology, May 1990.
yoshimi, Semiconductor World, Sep. 1990, p. 106.
Kawahara et al., "Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure," Jpn. J. Appl. Phys., vol. 31 (1992), pp. 2925-2930.
Koshi et al., "Measurements of the Absolute Concentration of H and OH Produced in the SiH.sub.3 +O.sub.2 Reaction: Determination of the Product Branching Ratios," J. Phys. Chem. 1993, 97, 4473-4478.
Koshi et al., "Kinetics of the SiH.sub.3 + O.sub.2 Reaction Studied by Time-Resolved Mass Spectrometry," J. Phys. Chem. 1991, 95, 9869-9873.
Websters Third New International Dictionary of the English Language Unabridged, G&C Merriam Co., Springfield.
Semiconductor International. "Cluster Tpp;s fpr 1990s Chips", Aug. 1990, pp. 56-63.

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