Substrate for growing Pendeo epitaxy and method of forming...

Details Substrate for growing Pendeo epitaxy and method of forming... Substrate for growing Pendeo epitaxy and method of forming...

2007-01-09

2009-12-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S222000, C438S245000, C438S269000, C438S481000, C257SE21090, C257SE21097, C257SE21108, C257SE21133

Reexamination Certificate

active

07632742

ABSTRACT:
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

REFERENCES:
patent: 6121121 (2000-09-01), Koide
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6521514 (2003-02-01), Gehrke et al.
Zheleva et al., “Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films,” 1999, Journal of Electronic Materials, vol. 28, No. 4, pp. L5-L8.

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